Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
plasma réactif à décharge gazeuse — reaktyvioji dujų plazma statusas T sritis radioelektronika atitikmenys: angl. reactive gas plasma vok. reaktives Gasentladungsplasma, n; reaktives Gasplasma, n rus. реактивная газоразрядная плазма, f pranc. plasma réactif à décharge gazeuse, m … Radioelektronikos terminų žodynas
Plasma (physics) — For other uses, see Plasma. Plasma lamp, illustrating some of the more complex phenomena of a plasma, including filamentation. The colors are a result of relaxation of electrons in excited states to lower energy states after they have recombined… … Wikipedia
Reactive-ion etching — (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High energy ions from the plasma… … Wikipedia
Plasma nitriding — or ion nitriding (sometimes also called plasma ion nitriding) or glow discharge nitriding, is an industrial surface hardening treatment for metallic materials.DescriptionA plasma is the fourth state of matter, the other three being solid, liquid… … Wikipedia
Plasma etching — is a form of plasma processing used to fabricate integrated circuits. It involves a high speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be… … Wikipedia
Plasma-unterstütztes Ätzen — (physikalisch chemisches Ätzen) bezeichnet eine Gruppe von subtraktiven (abtragenden) Mikrostrukturverfahren in der Halbleitertechnologie. Als Trockenätzverfahren stellen sie alternative Strukturierungsverfahren zum sog. Nassätzen (nasschemischen … Deutsch Wikipedia
Plasma-Ätzen — Plasmaätzen ist ein materialabtragendes, plasmaunterstütztes, gaschemisches Trockenätz Verfahren, das besonders in der Halbleitertechnik, Mikrostrukturtechnologie und in der Displaytechnik großtechnisch eingesetzt wird. Der Begriff Plasmaätzen… … Deutsch Wikipedia
Plasma ashing — In semiconductor manufacturing plasma ashing is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive… … Wikipedia
Inductively coupled plasma mass spectrometry — ICP MS Instrument Acronym ICP MS Classification Mass spectrometry Analytes atomic and polyatomic species in plasma, with exceptions; usually inte … Wikipedia
Inductively coupled plasma — An inductively coupled plasma (ICP) is a type of plasma source in which the energy is supplied by electrical currents which are produced by electromagnetic induction, that is, by time varying magnetic fields. [A. Montaser and D. W. Golightly, eds … Wikipedia
